武東星 教授 (Dong-Sing Wuu)

1.      Hui Li, Shuo-Huang Yuan, Tsun-Min Huang, Hsuan-Jen Chen, Fu-Hsing Lu, Sam Zhang, Dong-Sing Wuu* (2020, May). Impact of thermal-induced sapphire substrate erosion on material and photodetector characteristics of sputtered Ga₂O₃ films. J. Alloy. Compd., 823, Article No.153755 (1-7 pages).

2.      Dong-Sing Wuu* (2020, Mar). Special Issue Editorial: Functional Oxide Based Thin-Film Materials. Crystals, 10(3), Article No. 195 (1-3 Pages).

3.      Shou-Huang Yuan, Shih-Siang Yan, Yu-Shiuan Yao, Chung-Cheng Wu, Ray-Hua Horng, Dong-Sing Wuu* (2020, Mar). Process integration and interconnection design of passive-matrix LED micro-displays with 256 pixel-per-inch resolution. IEEE J. Electron Devices Soc., 8, 251-255.

4.      Jih-Sheng Chiu, Yi-Man Zhao, Sam Zhang, Dong-Sing Wuu* (2020, Jan). The role of laser ablated backside contact pattern in efficiency improvement of mono crystalline silicon PERC solar cells. Solar Energy, 196, 462-467.

5.      Hui Li, Po-Wei Chen, Shuo-Huang Yuan, Tsun-Min Huang, Sam Zhang, Dong- Sing Wuu* (2019, Dec). Improved performance of deep ultraviolet photodetector from sputtered Ga₂O₃ films using post-thermal treatments. IEEE Photonics J., 11(6), 2201308 (9 pages).

6.      Che-Yuan Yeh, Yi-Man Zhao, Hui Li, Fei-Peng Yu, Sam Zhang, Dong-Sing Wuu* (2019, Nov). Growth and photocatalytic properties of gallium oxide films using chemical bath deposition. Crystals, 9, 564 (9 pages)

7.      Ming-Chun Tseng, Dong-Sing Wuu, Chi-Lu Chen, Hsin-Ying Lee, Cheng-Yu Chien, Po-Liang Liu, Ray-Hua Horng* (2019, Oct). Characteristics of atomic layer deposition-grown zinc oxide thin film with and without aluminum. Appl. Surf. Sci., 491, 535-543.

8.      Po-Wei Chen, Shiau-Yuan Huang, Shuo-Huang Yuan, Yi-An Chen, Po-Wen Hsiao, Dong-Sing Wuu* (2019, Sep). Quasi-single-crystalline ZnGa₂O₄ films via solid phase epitaxy for enhancing deep-ultraviolet photoresponse. Adv. Mater. Interfaces, 1901075 (10 pages).

9.      Yi-An Chen, Kuo-Hsien Chou, Yi-Yang Kuo, Cheng-Ye Wu, Po-Wen Hsiao, Po- Wei Chen, Shuo-Huang Yuan, Dong-Sing Wuu* (2019, Jul). Formation of ZnO/Zn_0.5Cd_0.5Se alloy quantum dots in the presence of high oleylamine contents. Nanomaterials, 9, 999 (12 pages).

10.   Hong Yang, Yao Liu, Xuguang Luo, Dong-Sing Wuu, Kaiyan He, Zhe Chuan Feng* (2019, July). Effects of growth temperature and thickness on structure and optical properties of Ga2O3 films grown by pulsed laser deposition. Superlattices & Microstructures, 131, 21-29.

11.  Chia-Hsun Hsu, Yang-Shih Lin, Hsin-Yu Wu, Xiao-Ying Zhang, Ean-Yu Wu, Shui-Yang Lien*, Dong-Sing Wuu, Yeu-Long Jiang (2019, July). Deposition of silicon-based stacked layers for flexible encapsulation of organic light emitting diodes. Nanomaterials, 9 (7), 1053 (8 pages)

12.   Hong Yang, Yingda Qian, Chi Zhang, Dong-Sing Wuu, Devki N.Talwar, Hao-Hsiung Lin, Jyh-Fu Lee, Lingyu Wan, Kaiyan He, Zhe Chuan Feng* (2019, Jun). Surface/structural characteristics and band alignments of thin Ga₂O₃ films grown on sapphire by pulsed laser deposition. Appl. Surf. Sci., 479, 1246-1253.

13.   Po-Wei Chen, Shiau-Yuan Huang, Chao-Chun Wang, Shuo-Huang Yuan, Dong-Sing Wuu* (2019, Jun). Influence of oxygen on sputtering of aluminum-gallium oxide films for deep-ultraviolet detector applications. J. Alloy. Compd., 791, 1213-1219.

14.   Shuo-Huang Yuan. Sin-Liang Ou, Shiau-Yuan Huang, Dong-Sing Wuu* (2019, May). Enhanced deep-ultraviolet responsivity in aluminum-gallium oxide photodetectors via structure deformation by high-oxygen-pressure pulsed laser deposition. ACS Appl. Mater. Interfaces, 11(19), 17563-17569.

15.   Chi Zhang, Yao Li, Yingda Qian, Yuanlan Liang, Devki N Talwar, Shih-Yung Huang, Qingxuan Li, Daniel Seidlitz, Nikolaus Dietz, Dong-Sing Wuu, Ian T. Ferguson, Xiang Lu, Lingyu Wan, Kaiyan He, Zhe Chuan Feng* (2019, Jan). Surface and optical properties of indium-rich InGaN layers grown on sapphire by migration-enhanced plasma assisted metal organic chemical vapor deposition. Mater. Res. Express., 6(1), 016407.

16.   Chia-Hsun Hsu, Chun-Wei Huang, Yun-Shao Cho, Wan-Yu Wu, Dong-Sing Wuu, Xiao-Ying Zhang, Wen-Zhang Zhu, Shui-Yang Lien*, Chang-Sin Ye (2019, Jan). Efficiency improvement of PERC solar cell using an aluminum oxide passivation layer prepared via spatial atomic layer deposition and post-annealing. Surf. Coat. Tech., 358, pp. 968-975.

17.   Ray-Hua Horng*, Ming-Chung Tseng, Dong-Sing Wuu (2019, Jan). Surface treatments on the characteristics of metal-oxide semiconductor capacitors. Crystals, 9(1), 1.

18.   Shuo-Huang Yuan, Sin-Liang Ou, Chien-Ming Chen, Shiau-Yuan Huang, Bo-Wen Hsiao, Dong-Sing Wuu* (2019, Jan). Characterization of aluminum gallium oxide films grown by pulsed laser deposition. Ceram. Int., 45(1), pp. 702-707.

19.   Yao Li, Chi Zhang, Xuguang Luo, Yuanlan Liang, Dong-Sing Wuu, Chin-Che Tin, Xiang Lu, Kaiyan He, Lingyu Wan, Zhe Chuan Feng* (2018, Nov). Surface, structural and optical properties of AlN thin films grown on different face sapphire substrates by metalorganic chemical vapor deposition. Appl. Surf. Sci., 458, pp. 972-977.

20.   Chao-Chun Wang, Shuo-Huang Yuan, Sin-Liang Ou, Shiau-Yuan Huang, Ku- Yen Lin, Yi-An Chen, Po-Wen Hsiao, Dong-Sing Wuu* (2018, Oct). Growth and characterization of co-sputtered aluminum-gallium oxide thin films on sapphire substrates. J. Alloy. Compd., 765, pp. 894-900.

21.   Tzu-Ken Lin, Dong-Sing Wuu*, Shih-Yung Huang, Wei-Kai Wang (2018, Oct). Preparation and characterization of sprayed-yttrium oxyfluoride corrosion protective coating for plasma process chambers. Coatings, 8(10), 373.

22.   Tzu-Yu Wang, Chi-Tsung Tasi, Ku-Yen Lin, Sin-Liang Ou, Ray-Hua Horng, Dong-Sing Wuu* (2018, Oct). Surface evolution and effect of V/III ratio modulation on etch-pit-density improvement of thin AlN templates on nanopatterned sapphire substrates by metalorganic chemical vapor deposition. Appl. Surf. Sci., 455, pp. 1123-1130.

23.   Che-Chun Lin, Dong-Sing Wuu, Jung-Jie Huang (2018, Sep). Antireflection and passivation property of aluminium oxide thin film on silicon nanowire by liquid phase deposition. Surf. Coat. Tech., 350, pp. 1058-1064.

24.   Chi-Tsung Tasi, Wei-Kai Wang, Sin-Liang Ou, Shih-Yung Huang, Ray-Hua Horng, Dong-Sing Wuu (2018, Sep). Structural and stress properties of AlGaN epilayers grown on AlN-nanopatterned sapphire templates by hydride vapor phase epitaxy. Nanomaterials, 8(9), 704.

25.   Ray-Hua Horng*, Huan-Yu Chien, Fu-Gow Tarntair, Dong-Sing Wuu (2018, Aug). Fabrication and study on red light micro-LED displays. IEEE Trans. Electron Devices, 6(1), pp. 1067-1069.

26.   Ching-Ho Chen, Jia-Jhen Jhen, Dong-Sing Wuu, Ray-Hua Horng* (2018, Jul). A new material and structures for light-emitting thyristor applications. IEEE Trans. Electron Devices, 65(7), pp. 2904-2908.

27.   Shuo-Huang Yuan, Sin-Liang Ou, Chao-Chun Wang, Shiau-Yuan Huang, Chien-Ming Chen, Ku-Yen Lin, Yi-An Chen, Dong-Sing Wuu* (2018, Jul). Effects of high substrate temperature during pulsed laser deposition on the quality of aluminum-doped gallium oxide and its photodetector characteristics. Jpn. J. Appl. Phys., 57(7), 070301.

28.   Wu-Chang Peng, Yao-Ching Chen, Ju-Liang He, Sin-Liang Ou, Ray-Hua Horng, Dong-Sing Wuu* (2018, Jun). Tunability of p- and n-channel TiOx thin film transistors. Sci. Rep., 8, 9255.

29.   Ching-Ho Chen, Ming-Chun Tseng, Yu-Jie Chen, Dong-Sing Wuu, Ray-Hua Horng* (2018, Apr). Performance comparisons of light-emitting thyristors with and without indium tin oxide transparent conductive layers. Phys. Status. Solidi. A, 215(8), 1700442.

30.   Dong-Sing Wuu*, Sin-Liang Ou, Ching-Ho Tien (2018, Mar). Slow electron making more efficient radiation emission. Sci. Rep., 8, 4865.

31.   Ming-Chun Tseng, Dong-Sing Wuu, Chi-Lu Chen, Hsin-Ying Lee, Ray-Hua Horng* (2018, Feb). Zinc oxide-based current spreading layer behavior on the performance of P-side-up thin-film red light emitting diodes. Appl. Surf. Sci., 432, pp. 196-201.

32.   Shuo-Huang Yuan, Chao-Chun Wang, Shiau-Yuan Huang, Dong-Sing Wuu* (2018, Feb). Improved responsivity drop from 250 to 200 nm in sputtered gallium oxide photodetectors by incorporating trace aluminum. IEEE Electron Device Lett., 39(2), pp. 220-223.

33.   Ching-Ho Tien, Chen-Hao Kuo, Dong-Sing Wuu, Ray-Hua Horng* (2017, Nov). Improved optoelectronic performance of high-voltage ultraviolet light-emitting diodes through electrode designs. IEEE T. Electron. Dev., 64(1), pp. 4526-4531.

34.   Sin-Liang Ou, Fei-Peng Yu, Dong-Sing Wuu* (2017, Oct). Transformation from film to nanorod via a sacrifical layer: pulsed laser deposition of ZnO for enhancing photodetector performance. Sci. Rep., 7, 14251.

35.   Tzu-Yu Wang, Chi-Tsung Tasi, Chia-Feng Lin, Dong-Sing Wuu* (2017, Oct). 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering. Sci. Rep., 7, 14422.

36.   Ching-Ho Tien, Sin-Liang Ou, Yi OuYang, Chien-Ming Chen, Dong-Sing Wuu* (2017. Aug.) “A Low-Temperature external electron retarding electrode for improving vertical green LED performance,” IEEE Transactions on Electron Devices, Vol. 64, No. 8, pp. 3219-3225.

37.   Tzu-Ken Lin, Wei-Kai Wang, Shih-Yung Huang, Chi-Tsung Tasi, Dong-Sing Wuu* (2017, Jul.) “Comparison of erosion behavior and particle contamination in mass-production CF4/O-2 plasma chambers using Y2O3 and YF3 protective coatings,” Nanomaterials, Vol. 7, No. 7, 183. DOI: 10.3390/nano7070183.

38.   Ming-Chun Tseng, Dong-Sing Wuu, Chi-Lu Chen, Hsin-Ying Lee, Ray-Hua Horng* (2017, Jul.) “Ohmic contact behavior of aluminum-doped zinc oxide with carbon doped p-GaP epilayer for AlGaInP LEDs applications,” Current Applied Physics, Vol. 1, No. 7, pp. 966-971.

39.   Jung-Jie Huang*, Che-Chun Lin, Dong-Sing Wuu (2017, Jun.) “Antireflection and passivation property of titanium oxide thin film on silicon nanowire by liquid phase deposition,” Surf. Coatings Technol. Vol. 320, pp. 252-258.

40.   Ming-Chun Tseng, Dong-Sing Wuu, Chi-Lu Chen, Hsin-Ying Lee, Yu-Chang Lin, Ray-Hua Horng (2017, Jun.) “Performance of p-side-up thin-film AlGaInP light-emitting diodes with textured composite aluminum-doped zinc oxide transparent conductive layers,” Surf. Coatings Technol. Vol. 320, pp. 421-425

41.   Chi-Tsung Tasi, Wei-Kai Wang, Tsung-Yen Tsai, Shih-Yung Huang, Ray-Hua Horng, Dong-Sing Wuu* (2017, Jun.) “Reduction of defects in AlGaN grown on nanoscale-patterned sapphire substrates by hydride vapor phase epitaxy,” Materials, Vol. 10, No. 6, 605, DOI:10.3390/ma10060605

42.   Ping-Chen Wu, Sin-Liang Ou, Ray-Hua Horng, Dong-Sing Wuu* (2017, Jun.) “Improved Performance of high-voltage vertical GaN LEDs via modification of micro-cell geometry,” Appl. Sci. Basel, Vol. 7, No. 6, 506, DOI: 10.3390/app7060506

43.   Ping-Chen Wu, Sin-Liang Ou, Ray-Hua Horng, Dong-Sing Wuu* (2017, Jun.) “Enhanced Light Extraction of high-voltage light emitting diodes using a sidewall chamfer structure,” IEEE Photonics Journal, Vol. 9, No. 3, 8201409, DOI: 10.1109/ JPHOT.2017.2710019.

44.   Po-Jung Lin, Ching-Ho Tien, Tzu-Yu Wang, Che-Lin Chen, Sin-Liang Ou, Bu-Chin Chung, Dong-Sing Wuu* (2017, May) “On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate,” Crystals, Vol. 7, No. 5, 134, DOI: 10.3390/cryst7050134.

45.   Shuo-Huang Yuan, Feng-Yeh Chang, Dong-Sing Wuu, Ray-Hua Horng* (2017, May) “AlGaN/GaN MOS-HEMTs with corona-discharge plasma treatment,” Crystals, Vol. 7, No. 5, 1464, DOI: 10.3390/cryst7050146.

46.   Wu-Chang Peng, Ying-Hung Chen, Jing-Yu Chen, Ju-Liang He, Dong-Sing Wuu* (2017, Apr). High power impulse magnetron sputtered p-type gamma-titanium monoxide films: Effects of substrate bias and post-annealing on microstructure characteristics and optoelectrical properties Materials Science in Semiconductor Processing, 61, 85-92.

47.   Ching-Ho Tien, Shih-Hao Chuang, Huan-Min Lo, Stone Tasi, Chang-Lu Wu, Sin-Liang Ou, Dong-Sing Wuu* (2017, Mar). ITO/nano-Ag plasmonic window applied for efficiency improvement of near-ultraviolet light emitting diodes. Physica Status Solidi A, 214 (3), 1600609.

48.   Ping-Chen Wu, Sin-Liang Ou, Ray-Hua Horng, and Dong-Sing Wuu* (2017, Mar). Improved Performance and Heat Dissipation of Flip-Chip White High-Voltage Light Emitting Diodes. IEEE Transactions on Device and Materials Reliability, 17(1), 197-203.

49.   Ray-Hua Horng, Hsu-Hung Hsueh, Sin-Liang Ou, Chi-Tsung Tsai, Tsung-Yen Tsai and Dong-Sing Wuu* (2017, Mar). Chemical lift-off process for nitride LEDs from an eco-GaN template usingan AlN/strip-patterned-SiO2sacrificial layer. Physica Status Solidi A, 214 (3), 1600657.

50.   Wei-Kai Wang*, Shih-Yung Huang, Ming-Chien Chiang, Dong-Sing Wuu (2017, Jan.) “Optoelectronic properties and structural characterization of GaN thick films on different substrates through pulsed laser deposition,” Appl. Sci. Basel, Vol. 7, No. 1, 87, DOI: 10.3390/app7010087.

51.   Che-Chun Lin, Jung-Jie Huang, Dong-Sing Wuu, Chao-Nan Chen (2016, Dec). Surface passivation property of aluminum oxide thin film on silicon substrate by liquid phase deposition. Thin Solid Films, 618, 118–123.

52.   Tzu-Ken Lin, Dong-Sing Wuu, Shih-Yung Huang, Wei-Kai Wang (2016, Dec). Characteristics of yttrium fluoride and yttrium oxide coatings for plasma process equipment prepared by atmospheric plasma spraying. Jpn J. Appl. Phys., 55, 126201.

53.   Tzu-Yu Wang, Jia-Hao Liang, Guan-Wei Fua, Dong-Sing Wuu* (2016, Dec). Defect annihilation mechanism of AlN buffer structures with alternating high and low V/III ratios grown by MOCVD. CrystEngComm, 18, 9152–9159.

54.   Ching-Ho Tien, Kuo-Wei Ho, Huan-Yu Chien, Dong-Sing Wuu, Ray-Hua Horng* (2016, Oct). Effect of the Phosphor Permanent Substrate on the Angular CCT for White Thin-Film Flip-Chip Light-Emitting Diodes. IEEE Transactions on Electron Devices, 63, 3977-3982.

55.   Ming-Chun Tseng, Dong-Sing Wuu, Chi-Lu Chen, Hsin-Ying Lee, Yu-Chang Lin, Ray-Hua Horng (2016, Oct). Enhanced light extraction in wafer-bonded p-side-up thin-film AlGaInP light emitting diodes via zinc oxide nanorods. Optical Materials Express, 10, 3293-3302.

56.   Hong-Ru Liu, Sin-Liang Ou, Shih-Yin Wang, and Dong-Sing Wuu* (2016, Jul). On the role of diluted magnetic cobalt-doped ZnO electrodes in efficiency improvement of InGaN light emitters. Appl. Phys. Lett., 109(2), Article No. 021110 (5 pages).

57.   Hsu-Hung Hsueh, Sin-Liang Ou, Yu-Che Peng, Chiao-Yang Cheng, Dong-Sing Wuu, Ray-Hua Horng (2016, Jul). Effect of top-region area of flat-top pyramid patterned sapphire substrate on the optoelectronic performance of GaN-based light-emitting diodes. J. Nanomaterials, Article No. 2701028.

58.   Ming-Chun Tseng, Dong-Sing Wuu, Chi-Lu Chen, Hsin-Ying Lee, Yu-Chang Lin, Ray-Hua Horng (2016, Apr). Performance comparison of p-side-up thin-film AlGaInP light emitting diodes with aluminum-doped zinc oxide and indium tin oxide transparent conductive layers. Optical Materials Express, 6(4), 1349-1357.

59.   Shui-Yang Lien, Yang-Shih Lin, Yun-Shao Cho, Dong-Sing Wuu (2016, Apr). Performance of flexible photovoltaic modules encapsulated by silicon oxide/organic silicon stacked Layers. IEEE Transactions on Electron Devices, 63(4), 1615-1620.

60.   Po-Jung Lina, Shih-Yung Huang, Wei-Kai Wang, Che-Lin Chen, Bu-Chin Chung, Dong-Sing Wuu* (2016, Jan). Controlling the stress of growing GaN on 150-mm Si (111) in an AlN/GaN strained layer superlattice. Appl. Surf. Sci., 362, 434-440.

61.   Sin-Liang Ou, Hong-Ru Liu, Shih-Yin Wang, Dong-Sing Wuu* (2016, Jan). Co-doped ZnO dilute magnetic semiconductor thin films by pulsed laser deposition: excellent transmittance, low resistivity and high mobility. Journal of Alloys and Compounds, 663C, 107-115.

62.   Bing-Rui Wu, Tsung-Hsien Tsai, Dong-Sing Wuu* (2015, Nov). Hot-wire chemical vapor deposition of nanocrystalline silicon for ambipolar thin-film transistor applications. Appl. Surf. Sci., 354, 216-220.

63.   Ray-Hua Horng, Ching-Ho Tien, Shih-Hao Chuang, Keng-Chen Liu, and Dong-Sing Wuu (2015, Nov). External stress effects on the optical and electrical properties of flexible InGaN-based green light-emitting diodes. Optics Express, 23(24), 31334-31341.

64.   Tzu-Yu Wang, Jia-Hao Liang and Dong-Sing Wuu* (2015, Nov). Defect formation mechanism and quality improvement of InAlN epilayers grown by metal–organic chemical vapor deposition. CrystEngComm, 17(44), 8505-8511.

65.   Hsu-Hung Hsueh, Sin-Liang Ou, Dong-Sing Wuu, and Ray-Hua Horng (2015, Aug). InGaN LED fabricated on Eco-GaN template with a Ga2O3 sacrificial layer for chemical lift-off application. Vacuum, 118, 8-12.

66.   Li-Chin Cheng, Chih-Ming Chen, Ming-Guan Chen, Chi-Chang Hu, Hsin-Yi Jiang, Ray-Hua Horng, and Dong-Sing Wuu (2015, Aug). A high-temperature die-bonding structure fabricated at low temperature for light-emitting diodes. IEEE Electron Device Letters, 36(8), 835-837.

67.   Ming-Chun Tseng, Ray-Hua Horng, Dong-Sing Wuu*, and Shui-Yang Lien (2015, Aug). Silicon films deposited on flexible substrate by hot-wire chemical-vapor deposition. Vacuum, 118, 109-112.

68.   Dong-Sing Wuu, Che-Chun Lin, Chao-Nan Chen, Hong-Hsiu Lee, and Jung-Jie Huang (2015, Jun). Properties of double-layer Al2O3/TiO2 antireflection coatings by liquid phase deposition. Thin Solid Films, 584, 248–252.

69.   Fei-Peng Yu, Sin-Liang Ou, and Dong-Sing Wuu* (2015, Apr). Pulsed laser deposition of gallium oxide films for high performance solar-blind photodetectors. Optical Materials Express, 5(5), 1240-1249.

70.   Shih-Hao Chuang, Cheng-Sheng Tsung, Ching-Ho Chen, Sin-Liang Ou, Ray-Hua Horng, Cheng-Yi Lin, and Dong-Sing Wuu* (2015, Jan). Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications. ACS Applied Materials & Interfaces, 7(4), 2546-2553.

71.   Shui-Yang Lien*, Yun-Shao Cho, Yan Shao, Chia-Hsun Hsu, Chia-Chi Tsou, Wei Yan, Pin Han, and Dong-Sing Wuu (2015, Jan). Influence of surface morphology on the effective lifetime and performance of silicon heterojunction solar cell. International Journal of Photoenergy, 2015, 273615.

72.   Yun-Shao Cho, Chia-Hsun Hsu, Shui-Yang Lien*, Dong-Sing Wuu, Pin Han, Chia-Fu Chen, and Jui-Hao Wang (2014, Dec). Effect of plasma radical composition in intrinsic a-Si:H on performances of heterojunction solar cells. IEEE Transactions on Plasma Science, 42(12), 3786-3791.

73.   Jung-Jie Huang*, Che-Chun Lin, Dong-Sing Wuu (2014, Dec). Synthesis of silver nanoparticles by chemical reduction method and its metal induced crystallization of poly-Si thin film application. Mater. Research Express, 1(4) 046401 (15 pages).

74.   Yang-Shih Lin, Shui-Yang Lien*, Dong-Sing Wuu, Yu-Xuan Huang, and Chung-Yuan Kung (2014, Nov). Improvement in performance of Si-based thin film solar cells with a nanocrystalline SiO₂–TiO₂ layer. Thin Solid Films, 570, 200-203.

75.   Wen-Yu Lin, Tzu-Yu Wang, Jia-Hao Liang, Sin-Liang Ou, and Dong-Sing Wuu* (2014, Nov). Analysis of the thickness effect of un-doped electron-blocking layer in ultraviolet LEDs. IEEE Trans. on Electron Device, 61(11), 3790-3795.

76.   Chao-Chun Wang, Zong-Syun Wu, Chia-Hsun Hsu, Shui-Yang Lien*, Dong-Sing Wuu, Pin Han (2015, Sep). Performance of a-SiGe:H thin-film solar cells on high-heat dissipation flexible ceramic printable circuit board. IEEE Trans. on Electron Device, 61(9), 3125-3130.

77.   Tzu-Yu Wang, Sin-Liang Ou, Ray-Hua Horng, and Dong-Sing Wuu* (2014, Aug). Improved GaN-on-Si epitaxial quality by incorporating various SixNy interlayer structures. J. Cryst. Growth, 399, 27-32.

78.   Min-Yen Yeh*, Yu-Fong Huang, Cheng-Liang Huang, Chyi-Da Yang, Dong-Sing Wuu, and Po-Hsun Lei (2014, July). Metal chloride precursor synthesization of Cu₂ZnSnS₄ solar cell materials. J. the Korean Physical Society, 65(2), 196-199.

79.   Chia-Hsun Hsu, Yang-Shih Lin, Yun-Shao Cho, Shui-Yang Lien*, Pin Han, and Dong-Sing Wuu (2014, July). Highly stable micromorph tandem solar cells fabricated by ECRCVD with separate silane gas inlets system. IEEE J. Quantum Electronics, 50(7), 515-521.

80.   Kun-Ching Shen, Wen-Yu Lin, Han-Yu Lin, Ken-Yen Chen, and Dong-Sing Wuu* (2014, July). Self-textured oxide structure for improved performance of 365 nm ultraviolet vertical-type light-emitting diodes. Optics Express, 22(15), 17600-17606.

81.   Hsu-Hung Hsueh, Sin-Liang Ou, Chiao-Yang Cheng, Dong-SingWuu*, and Ray-Hua Horng (2014, Jun). Performance of InGaN light-emitting diodes fabricated on patterned sapphire substrates with modified top-tip cone shapes. International J. Photoenergy, 2014, 796253.

82.   Tzu Yu Wang, Sin Liang Ou, Ray Hua Horng and Dong Sing Wuu* (2014, Jun). Growth evolution of Si_xN_y on the GaN underlayer and its effects on GaN-on-Si (111) heteroepitaxial quality. CrystEngComm, 16(25), 5724–5731.

83.   Hung-I Lin, Ray-Hua Horng, Kun-Ching Shen, and Dong-Sing Wuu* (2014, May). ZnO Nanowires Embedded in Epoxy Resin Separating from the Substrate for Wearable Electronics Applications. IEEE Transactions on Nanotechnology, 13(3), 458-463.

84.   Ray-Hua Horng, Shih-Hao Chuang, Ching-Ho Tien, Sin-Cyuan Lin, and Dong-Sing Wuu (2014, Apr). High performance GaN-based flip-chip LEDs with different electrode patterns. Optics Express, 22(S3) A941-A946. 

85.   Wen-Yu Lin, Tzu-Yu Wang, Sin-Liang Ou, Jia-Hao Liang, Dong-Sing Wuu* (2014, Apr). Improved performance of 365-nm LEDs by inserting an un-doped electron-blocking layer. IEEE Electron Device Lett., 35(4), 467-469.

86.   Bing-Rui Wu, Sin-Liang Ou, Shih-Yung Lo, Hsin-Yuan Mao, Jhen-Yu Yang, Dong-Sing Wuu* (2014, Mar). Texture-Etched SnO₂ Glasses Applied to Silicon Thin-Film Solar Cells. J. Nanomaterials, 2014(2014), 907610.

87.   Fei-Peng Yu, Sin-Liang Ou, Pin-Chuan Yao, Bing-Rui Wu, Dong-Sing Wuu* (2014, Mar). Structural, surface morphology and optical properties of ZnS films by chemical bath deposition at various Zn/S molar ratios. J. Nanomaterials, 2014(2014), 594952.

88.   Ray-Hua Horng*, Kun-Ching Shen, Ching-Ho Tien, Sin-Cyuan Lin and Dong-Sing Wuu (2014, Feb). Performance of Cu-plating vertical LEDs in heat dissipation using diamond-like carbon. IEEE Electron Device Lett., 35(2), 169-171.

89.   Ray-Hua Horng*, Bing-Rui Wu, Ching-Ho Tien, Sin-Liang Ou, Min-Hao Yang, Hao-Chung Kuo, and Dong-Sing Wuu (2014, Jan). Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates. Optics Express, 22(S1), A179-A187.

90.   Wei Zheng, Zhe Chuan Feng*, Jyh-Fu Lee, Dong-Sing Wuu, Rui Sheng Zheng (2014, Jan). Lattice deformation of wurtzite Mg_xZn_1-xO alloys: An extended X-ray absorption fine structure study. J. Alloys and Compounds, 582, 157-160.

91.   Shih-Hao Chuang, Chun-Ting Pan, Kun-Ching Shen, Sin-Liang Ou, Dong-Sing Wuu* and Ray-Hua Horng (2013, Dec). Thin film GaN LEDs using a patterned oxide sacrificial layer by chemical lift-off process. IEEE Photonics Technology Lett., 25(24), 2435-2438.

92.   Kun-Ching Shen, Ming-Chien Jiang, Hong-Ru Liu, Hsu-Hung Hsueh, Yu-Cheng Kao, Ray-Hua Horng and Dong-Sing Wuu* (2013, Nov). Pulsed laser deposition of hexagonal GaN-on-Si(100) template for MOCVD applications. Optics Express, 21(22), 26468-26474.

93.   Ray-Hua Horng, Bing-Rui Wu, Chi-Feng Weng,Parvaneh Ravadgar, Tzong-Ming Wu,Sing-Ping Wang, Jr-Hau He,4 Tsung-Hsien Yang, Yi-Ming Chen, Tzu-Chieh Hsu, Ai-Sen Liu, and Dong-Sing Wuu (2013, Aug). P-side up AlGaInP-based light emitting diodes with dot-patterned GaAs contact layers. Optics Express, 21(17), 19668-19674.

94.   Yun-Shao Cho, Chia-Hsun Hsu, Shui-Yang Lien, Dong-Sing Wuu and In-Cha Hsieh (2013, Aug). Effect of hydrogen content in Intrinsic a-Si:H on performances of heterojunction solar cells. International J. Photoenergy, 2013(2013), 121875.

95.   Yun-Shao Cho, Chia-Hsun Hsu, Shui-Yang Lien, Dong-Sing Wuu, and In-Cha Hsieh (2013, Aug). Effect of Hydrogen Content in Intrinsic a-Si:H on Performances of Heterojunction Solar Cells. International Journal of Photoenergy, Vol. 2013, Article ID 121875, 6 pages.

96.   Hung-I Lin, Dong-Sing Wuu*, Kun-Ching Shen, and Ray-Hua Horng (2013, Jul). Fabrication of an Ultra-Flexible ZnO Nanogenerator for Harvesting Energy from Respiration. ECS Journal of Solid State Science and Technology, 2(9), P400-P404.

97.   Ray-Hua Horng, Kun-Ching Shen,Chen-Yang Yin,Chiung-Yi Huang, and Dong-Sing Wuu (2013, Jun). High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications. Optics Express, 21(12), 14452-14457.

98.   Tzu-Yu Wang,Sin-Liang Ou, Kun-Ching Shen, and Dong-Sing Wuu* (2013, May). Effect of non-vacuum thermal annealing on high indium content InGaN films deposited by pulsed laser deposition. Optics Express, 21(6), 7337-7342.

99.  Kun-Ching Shen, Wen-Yu Lin, Dong-Sing Wuu*, Shih-Yung Huang, Kuo-Sheng Wen, Shih-Feng Pai, Liang-Wen Wu, and Ray-Hua Horng (2013, Feb). An 83% Enhancement in the External Quantum Efficiency of Ultraviolet Flip-Chip Light-Emitting Diodes with the Incorporation of a Self-Textured Oxide Mask. IEEE Electron Device Letters, 34(2), 274-276.

100. Yang-Shih Lin, Shui-Yang Lien*, Yung-Chuan Huang, Chao-Chun Wang, Chueh-Yang Liu, Asheesh Nautiya, Dong-Sing Wuu, Shuo-Jun Lee (2013, Feb). Effect of oxygen to argon flow ratio on the properties of Al-doped ZnO films for amorphous silicon thin film solar cell applications. Thin Solid Films, Vol: 529, Pages 50–53.

101. Chiung-Yi Huang, Ray-Hua Horng*, Dong-Sing Wuu, Li-Wei Tu, and Hsiang-Shun Kao (2013, Jan). Thermal annealing effect on material characterizations of beta-Ga₂O₃ epilayer grown by metal organic chemical vapor deposition. Appl. Phys. Lett., 102(1), 011119.

102. Je-Yi Wu, Chih-Ming Chen*, Ray-Hua Horng, and Dong-Sing Wuu (2013, Jan). An Efficient Metal-Core Printed Circuit Board with a Copper-Filled Through (Blind) Hole for Light-Emitting Diodes. IEEE Electron Device Lett., 34(1), 105-107.

103. Ray-Hua Horng*, Kun-Ching Shen, Yu-Wei Kuo, and Dong-Sing Wuu (2013, Jan). GaN light emitting diodes with wing-type imbedded contacts. Optics Express, 21(1), A1-A6.

104. Ray-Hua Horng*, Wei-Cheng Kao, Sin-Liang Ou, Dong-Sing Wuu (2012, Oct). Effect of diamond like carbon layer on heat dissipation and optoelectronic performance of vertical-type InGaN light emitting diodes. Appl. Phys. Lett., 101(17), 171102-171102-4.

105. Kun-Ching Shen, Tzu-Yu Wang, Dong-Sing Wuu*, and Ray-Hua Horng (2012, Sep). High thermal stability of high indium content InGaN films grown by pulsed laser deposition. Optics Express, 20(19), 21173-21180.

106. Bing-Rui Wu, Shih-Yung Lo, Dong-Sing Wuu*, Sin-Liang Ou, Hsin-Yuan Mao, Jui-Hao Wang, Ray-Hua Horng (2012, July). Direct growth of large grain polycrystalline silicon films on aluminum-induced crystallization seed layer using hot-wire chemical vapor deposition. Thin Solid Films, 520(18), 5860-5866.

107. Kun-Ching Shen, Tzu-Yu Wang, Dong-Sing Wuu*, Ray-Hua Horng (2012, July). High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target. Optics Express, 20(14), 15149–15156.

108. Hsin-Yuan Mao, Shih-Yung Lo, Dong-Sing Wuu*, Bing-Rui Wu, Sin-Liang Ou, Hsin-Yu Hsieh, Ray-Hua Horng (2012, Jun). Hot-wire chemical vapor deposition and characterization of p-type nanocrystalline Si films for thin film photovoltaic applications. Thin Solid Films, 520(16), 5200-5205.

109. Bo-Hung Liou, Chih-Ming Chen*, Ray-Hua Horng, Yi-Chen Chiang, Dong-Sing Wuu (2012, May). Improvement of thermal management of high-power GaN-based light-emitting diodes. Microelectronics Reliability, 52(5), 861-865.

110. Ray-Hua Horng*, Kun-Ching Shen, Yu-Wei Kuo, Dong-Sing Wuu (2012, May). Effects of cell distance on the performance of GaN high-voltage light emitting diodes. ECS Solid State Lett. 1(5), R21-R23. 

111. Sin-Liang Ou, Dong-Sing Wuu*, Yu-Chuan Fu, Shu-Ping Liu, Ray-Hua Horng, Lei Liu, Zhe-Chuan Feng (2012, Apr). Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition. Mater. Chem. Phys., 133(2-3), 700-705.

112. Shui-Yang Lien*, Chih-Hsiang Yang, Chia-Hsun Hsu, Yang-Shih Lin, Chao-Chun Wang, Dong-Sing Wuu (2012, Mar). Optimization of textured structure on crystalline silicon wafer for heterojunction solar cell. Mater. Chem. Phys., 133(1), 63-68.

113. Ming-Chun Tseng, Ray-Hua Horng*, Fan-Lei Wu, Snin-Nan Lin, Hsin Her Yu, Dong-Sing Wuu (2012, Feb). Crystalline quality and photovoltaic performance of InGaAs solar cells grown on GaAs substrate with large-misoriented angle. Vacuum, 86(7), 843-847.

114. Chao-Chun Wang*, Dong-Sing Wuu, Shui-Yang Lien, Yang-Shih Lin, Chueh-Yang Liu, Chia-Hsum Hsu, and Chia-Fu Chen (2012, Jan). Characterization of nanocrystalline SiGe thin film solar cell with double graded-dead absorption layer. International J. Photoenergy, 2012(2012), Article ID 890284.

115. Hsin-Yuan Mao, Dong-Sing Wuu*, Bing-Rui Wu, Shih-Yung Lo, Hsin-Yu Hsieh, Ray-Hua Horng (2012, Jan). Hot-wire chemical vapor deposition and characterization of p-type nanocrystalline SiC films and their use in Si heterojunction solar cells. Thin Solid Films, 520(6), 2110-2114.

116. Shui-Yang Lien*, Chao-Chun Wang, Chueh-Yang Liu, Asheesh Nautiyal, Dong-Sing Wuu, Pi-Chuen Tsai, Chia-Fu Chen, Shuo-Jen Lee (2012, Jan). Power effect of ZnO:Al film as back reflector on the performance of thin-film solar cells. J. Vac. Sci. Technol. A,30(1), 011302.

117. A. G. Milekhin*, N. A. Yeryukov, L. L. Sveshnikova, T. A. Duda, E. I. Zenkevich, S. S. Kosolobov, A. V. Latyshev, C. Himcinski, N. V. Surovtsev, S. V. Adichtchev, Z. C. Feng, C. C. Wu, D. S. Wuu, D. R. T. Zahn (2011, Dec). Surface enhanced raman scattering of light by ZnO nanostructures. J. Experimental Theoretical Phys., 113(6), 983-991.

118. T.Y. Tsai, D.S. Wuu*, M.T. Hung, J.H. Tu, S.C. Huang, R.H. Horng, W.Y. Chiang, L.W. Tu, “Power enhancement of 410-nm InGaN-based light-emitting diodes on selectively etched GaN/Sapphire templates”, IEEE Trans. Electron Devices, 58, pp. 3962-3969, 2011.

119. S.C. Huang, K.C. Shen, D.S. Wuu^*, P.M. Tu, H.C. Kuo, C.C. Tu, R.H. Horng, “Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency and device performance,” J. Appl. Phys., 110, p. 123102, 2011

120. W.Y. Lin, D.S. Wuu*, S.C. Huang, S.Y. Lo, C.M. Liu, R.H. Horng, “Demonstration of InGaN light-emitting diodes by incorporating a self-textured oxide mask structure”, IEEE Photon. Technol. Lett., 23, pp. 1240-1242, 2011.

121. M.C. Tseng, R.H. Horng*, D.S. Wuu, M.D. Yang, “Effect of Crystalline Quality on Photovoltaic Performance for In(0.17)Ga(0.83)As Solar Cell Using X-Ray Reciprocal Space Mapping”, IEEE J. Quantum Electron., 47, pp. 1434-1442, 2011.

122. C.C. Wang, D.S. Wuu*, Y.S. Lin, S.Y. Lien, Y.C. Huang, C.Y. Liu, C.F. Chen, A. Nautiyal, S.J. Lee, “Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells”, J. Vac. Sci. Technol. A, 29, p. 104, 2011.

123. S.L. Ou, D.S. Wuu*, S.P. Liu, Y.C. Fu, S.C. Huang and R.H. Horng, “Pulsed laser deposition of ITO/AZO transparent contact layers for GaN LED applications”, Optics Express, 19, pp. 16244-16251, 2011.

124. M.S. Lin, C.F. Lin^*, W.C. Huang, G.M. Wang, B.C. Shieh, J.J. Dai, S.Y. Chang, D.S. Wuu, P.L. Liu and R.H. Horng, “Chemical-mechanical lift-off process for InGaN epitaxial layers”, Appl. Phys. Express, vol. 4, p. 062101, 2011.

125. E. Lay, D.S. Wuu*, S.Y. Lo, R.H. Horng, H.F. Wei, L.Y. Jiang, H.U. Lee and Y.Y. Chang, “Permeation barrier coatings by inductively coupled plasma CVD on polycarbonate substrates for flexible electronic applications”, Surface & Coatings Technol., vol. 205, pp. 4627-4273, 2011.

126. P.M. Tu, C.Y. Chang, S.C. Huang, C.H. Chiu, J.R. Chang, W.T. Chang, D.S. Wuu*, H.W. Zan, C.C. Lin, H.C. Kuo, C.P. Hsu, “Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier”, Appl. Phys. Lett., 98, p. 211107, 2011.

127. S.Y. Lo, D.S. Wuu*, C.H. Chang, C.C. Wang, S.Y. Lien and R.H. Horng, “Fabrication of Flexible Amorphous-Si Thin-Film Solar Cells on a Parylene Template Using a Direct Separation Process”, IEEE Trans. Electron Devices, 58, pp. 1433-1439, 2011.

128. H.Y. Mao, D.S. Wuu*, B.R. Wu, S.Y. Lo and R.H. Horng, “Hot-wire chemical vapor deposition and characterization of polycrystalline silicon thin films using a two-step growth method”, Mater. Chem. Phys., 126, pp. 665-668, 2011.

129. R.H. Horng^*, C.T. Pan, T.Y. Tsai and D.S. Wuu, “Transferring thin film GaN LED epi-structure to the Cu substrate by chemical lift-off technology,” Electrochem. Solid State Lett., 14, pp. H281-284, 2011.

130. T.Y. Tsai, D.S. Wuu^*, J.H. Tua, M.T Hung, S.C. Huang, S.Y. Huang, R.H. Horng, “Improved performance of near-ultraviolent light emitting diodes on selectively etched GaN templates,” Electrochem. Solid State Lett., 14, pp. H222-224, 2011.

131. W.Y. Lin, D.S. Wuu^*, S.C. Huang, R.H. Horng, “Enhanced output power of near-ultraviolet InGaN/AlGaN LEDs with patterned distributed Bragg reflectors”, IEEE Trans. Electron Devices, 58, pp. 173-179, 2011.

132. W.Y. Lin, K.C. Shen, R.H. Horng, D.S. Wuu*, “Enhancing light output power of InGaN-based light-emitting diodes with an embedded self-textured oxide mask structure,” J. Electrochem. Soc., 158(12), pp. H1242-H1246, 2011.

133. R.H. Horng^*, Y.A. Lu and D.S. Wuu, “Light extraction investigation for thin-film GaN light-emitting diodes with imbedded electrodes”, IEEE Photon. Technol. Lett., 23, pp. 54-56, 2011.

134. C.C. Wang, C.Y. Liu, S.Y. Lien^*, K.W. Weng, J.J. Huang, C.F. Chen, D.S. Wuu,  “Hydrogenated amorphous silicon-germanium thin films with a narrow band gap for silicon-based solar cells”, Current Appl. Phys., 11, pp. S50-S53, 2011.

135. S.Y. Lien^*, K.W. Weng, J.J. Huang, C.H. Hsu, C.T. Shen, C.C. Wang, Y.S. Lin, D.S Wuu, D.C. Wu, “Influence of CH₄ flow rate on properties of HF-PECVD a-SiC films and solar cell application”, Current Appl. Phys., 11, pp. S21-S24, 2011.

136. S.P. Liu, D.S. Wuu^*, S.L. Ou, Y.C. Fu, P.R. Lin, M.T. Hung, R.H. Horng, “Highly ultraviolet-transparent ZnO:Al conducting layers by pulsed laser deposition”, J. Electrochem. Soc. 158, pp. K127-K130, 2011.

137. K.C. Shen, D.S. Wuu*, C.C. Shen, S.L. Ou and R.H. Horng, “Surface modification on wet-etched patterned sapphire substrates using plasma treatments for improved GaN crystal quality and LED performance”, J. Electrochem. Soc. 158, pp. H988-H993, 2011.

138. T.Y. Tsai, R.H. Horng, D.S. Wuu*, S.L. Ou, M.T. Hung, “GaN epilayer grown on Ga₂O₃ sacrificial layer for chemical lift-off application,” Electrochem. Solid State Lett., 14, pp. H434-437, 2011.

139. T.Y. Tsai, S.L. Ou, M.T. Hung, D.S. Wuu*, R.H. Horng, “MOCVD growth of GaN on sapphire using a Ga₂O₃ interlayer,” J. Electrochem. Soc. 158, pp. H1172-H1178, 2011.

140. C.C. Wu, D.S. Wuu^*, P.R. Lin, T.N. Chen, R.H. Horng, S.L. Ou, Y.L. Tu, C.C. Wei, Z.C. Feng, “Characterization of Mg_xZn_1-xO thin films grown on sapphire substrates by metalorganic chemical vapor deposition,” Thin Solid Films, 519, pp. 1966-1970, 2011.

141. H.B. Lee, D.S. Wuu*, C.V. Lee, C.S. Lin, “Synergy between corrosion and wear of electrodeposited Ni-P coating in NaCl solution,” Triblolgy International, 44, pp. 1603-1609, 2011.

142.H.B. Lee*, C.H. Hsu, D.S. Wuu, “A study on the hydrogen evolving activity of electroplated Ni-P coating by using the Taguchi method,” J. New Mater. for Electrochemical Systems, 14(4), pp. 237-245, Oct. 2011.

143.H.B. Lee, C.S. Lin, D. S. Wuu*, C.Y. Lee, “Wear and corrosion investigation on the electrodeposited Ni-P coating,” Tribology Transactions, 54(4), pp. 497-504, 2011.

144.Y.S. Lin, S. Y. Lien*, C.C. Wang, C.H. Hsu, C.H. Yang, A. Nautiyal, D.S. Wuu, P.C. Tsai, S.J. Lee, “Optimization of recombination layer in the tunnel junction of amorphous silicon thin-film tande, solar cells,” International J. Photoenergy, Article No. 264709 (5 pages), 2011.

145.C.J. Chen, C.M. Chen^*, R.H. Horng, D.S. Wuu, J.S. Hong, “Thermal management and interfacial properties in high-power GaN-based light-emitting diodes employing diamond-added Sn-3 wt.%Ag-0.5 wt.%Cu solder as a die-attach material,” J. Electron. Mater., 39 pp. 2618-2626, Dec. 2010.

146.R.H. Horng^*, Y.A. Lu, D.S. Wuu, “Light extraction study on thin-film GaN light-emitting diodes with electrodes covering by wafer bonding and textured surfaces,” IEEE Trans. Electron Device 57, pp. 2651-2654, Oct. 2010.

147.R.H. Horng^*, J.S. Hong, Y.L. Tsai, D.S. Wuu, C.M. Chen, C.J. Chen, “Optimized thermal management from chip to heat sink for high-power GaN-based light-emitting diodes”, IEEE Trans. Electron Device 57, pp. 2203-2207, Sep. 2010.

148.M. C. Tseng, R. H. Horng^*, S. N. Lin, D. S. Wuu, C. H. Wu, C. K. Chao, H. H. Yu, “Effects of substrate orientation on the photovoltaic performance of InGaAs solar cells”, IEEE Trans. Electron Devices, 57, pp. 2138-2143, Sep. 2010.

149.R. H. Horng^*, M. T. Chu, H. R. Chen, W. Y. Liao, M. H. Wu, K. F. Chen, D. S. Wuu, “Improved conversion efficiency of textured InGaN solar cells with interdigitated imbedded electrodes,” IEEE Electron Device Lett., 31, pp. 585-587, June 2010.

150.S. Y. Lien, C. C. Wang, C. T. Shen, Y. C. Ou, Y. S. Cho, K. W. Weng, C. H. Chao, C. F. Chen, D. S. Wuu, “Effects of RF power and pressure on performance of HF-PECVD silicon thin-film solar cells,” Thin Solid Films, 518, pp. 7233-7235, 2010.

151.C. C. Wu, D. S. Wuu^*, P. R. Lin, T. N. Chen, R. H. Horng, “Realization and manipulation of ZnO nanorod arrays on sapphire substrates using a catalyst-free metalorganic chemical vapor deposition technique,” J. Nanosci. Nanotechnol. 10, pp. 3001-3011, 2010

152.D. S. Wuu^*, T. N. Chen, E. Lay, C. H. Liu, C.H. Chang, H. F. Wei L. Y. Jiang, H. U. Lee,Y. Y. Chang, “ Transparent barrier coatings on high temperature resisting polymer substrates for flexible electronic applications,” J. Electrochem. Soc. 157, pp. C47-C51, Feb. 2010.

153.R. H. Horng^*, H. L. Hu, M. T. Chu, Y. L. Tsai, Y. J. Tsai, C. P. Hsu, and D. S. Wuu, “Performance of flip-chip thin-film GaN light-emitting diodes with and without patterned sapphires”, IEEE Photon. Technol. Lett., 22, 550-552, Apr. 2010.

154.S.Y. Huang, R.H. Horng^*, P. H. Tseng, J.H. Tu, L.W. Tu, D. S.Wuu, “Study on hydrogen ion-implanted characteristic of thin-film green resonant-cavity light-emitting diodes,” IEEE Photon. Technol. Lett. 22, pp.404-406, 2010.

155.H. B. Lee, D. S. Wuu^*, C. Y. Lee, C. S. Lin, “Study of the corrosion behavior of nanocrystalline Ni-P electrodeposited coating,” Metall. Mater. Trans. A-Phys. Metall. Mater. Sci., 2, pp. 450-459, 2010.

156.S. Y. Huang, R. H. Horng*, Y. J. Tsai, P. R. Lin, W. K. Wang, Z. C. Feng, D. S. Wuu, “Influence of hydrogen implantation concentration on the characteristics of GaN-based resonant-cavity LEDs,” Semicond. Sci. Technol. 25, 035013, 2010.

157.H. B. Lee, D. S. Wuu*, C. Y. Lee, C. S. Lin, “Wear and immersion corrosion of Ni-P electrodeposit in NaCl solution,” Tribol. Int., 43, pp. 235-244, 2010.

158.R. H. Horng^*, H. L. Hu, M. T. Chu, Y. L. Tsai, Y. J. Tsai, C. P. Hsu, D. S. Wuu, “Performance of flip-chip thin-film GaN light-emitting diodes with and without patterned sapphires,” IEEE Photon. Technol. Lett. 22, pp.550-552, 2010.

159.B. R. Wu, D. S. Wuu^*, M. S. Wan, W. H. Huang, H. Y. Mao, R. H. Horng, “Fabrication of nc-Si/c-Si solar cells using hot-wire chemical vapor deposition and laser annealing,” Solar Energy Materials and Solar Cells,93, pp. 993-995, 2009.

160.S. Y. Lien^*, D. S. Wuu, “Simulation and fabrication of heterojunction silicon solar cells from numerical Computer and hot-wire CVD”, Prog. Photovolt: Res. Appl. 17, pp. 489-501, 2009.

161.B. R. Wu, D. S. Wuu^*, M. S. Wan, H. Y. Mao, R. H. Horng, “Fabrication of selective-emitter silicon heterojunction solar cells using hot-wire chemical vapor deposition and laser doping,” Thin Solid Films, 517, pp. 4749-4752, 2009.

162.S. Y. Lien^*, M. C. Tseng, C. H. Chao, K. W. Weng, H. H. Yu, D. S. Wuu, “Tungsten filament effect on electronic properties of hot-wire CVD silicon films for heterojunction solar cell application,” Thin Solid Films, 517, pp. 4720-4723, 2009.

163.T. N. Chen, D. S. Wuu^*, C. Y. Lin. C. C. Chen, R. H. Horng, “Thermal effects and plasma damage upon encapsulation of polymer solar cells”, Thin Solid Films, 517, pp. 4179-4183, 2009.

164.C. C. Wu, D. S. Wuu^*, P. R. Lin, T. N. Chen, R. H. Horng, “Three-step growth of well-aligned ZnO nanotube arrays by self-catalyzed metalorganic chemical vapor deposition method,” Cryst. Growth Design, 9, pp.4555-4561, 2009.

165.S. C. Huang, D. S. Wuu^*, P. Y. Wu, S. H. Chan, “Improved output power of 380-nm InGaN based LEDs using a heavily Mg-doped GaN insertion layer technique,” IEEE J. Select. Topics Quantum Electron.15, pp. 1132-1136, 2009.

166.R. H. Horng^*, Y. L. Tsai, T. M. Wu, D. S. Wuu, C. H. Chao, “Investigation of light extraction of InGaN LEDs with surface-textured indium tin oxide by holographic and natural lithography,” IEEE J. Select. Topics Quantum Electron.15, pp. 1327-1331, 2009.

167.R. H. Horng^*, H. Y. Hsiao, C. C. Chiang, D. S. Wuu, Y. L. Tsai, H. I. Lin, “Novel device design for high-power InGaN/sapphire LEDs using copper heat spreader with reflector,” IEEE J. Select. Topics Quantum Electron.15, pp. 1281-1286, 2009.

168.C. C. Wu, D. S. Wuu^*, P. R. Lin, T. N. Chen, R. H. Horng,” Repeated growing and annealing towards ZnO film by metal-organic CVD,” Chemical Vapor Deposition, 15, pp. 234-241, 2009.

169.Y. L. Tsai, R. H. Horng^*, P. L. Liu, M. C. Tseng, D. Y. Lin, D. S. Wuu, “Elimination of phase separation in metalorganic chemical vapor deposition-grown GaInP epilayers by compositionally step-graded Ga1−xInxP multilayers,” J. Appl. Phys. 106, 063517, 2009.

170.Y. L. Tsai, R. H. Horng^*, M. C. Tseng, C. H. Kuo, P. L. Liu, D. S. Wuu, D. Y. Lin, “Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers,” J. Cryst. Growth 311, pp. 3220-3224, 2009.

171.M. C. Tseng, R. H. Horng^*, Y. L. Tsai, D. S. Wuu, H. H. Yu, “Fabrication and characterization of GaAs solar cells on copper substrates,” IEEE Electron Device Lett. 30, pp. 940-942, 2009.

172.D.S. Wuu^*, H. W. Wu, S. T. Chen, T.Y. Tsai, X. Zheng, R. H. Horng, “Defect reduction of laterally regrown GaN on GaN/patterned sapphire substrates,” J. Cryst. Growth 311, pp. 3063-3066, 2009.

173.S. C. Huang, D. S. Wuu^*, P. Y. Wu, W. Y. Lin, P. M. Tu, Y. C. Yeh, C. P. Hsu, S. H. Chan, “Improved output power of 400-nm InGaN/AlGaN LEDs using a novel surface roughening technique,” J. Cryst. Growth 311, pp. 867-870, 2009.

174.M. Y. Yeh^*, C. C. Lee, D. S. Wuu, “Influences of synthesizing temperatures on the properties of Cu2ZnSnS4 prepared by sol-gel spin-coated deposition,” J. Sol-Gel Sci. Technol. 52, pp. 65-68, 2009.

175.S. Y. Huang, R. H. Horng^*, J. W. Shi, H. C. Kuo, D. S. Wuu, “High-performance InGaN-based green resonant-cavity light-emitting diodes for plastic optical fiber applications,” J. Lightwave Technol. 27, pp. 4084-4090, 2009.

176.R. H. Horng^*, C. C. Chiang, Y. L. Tsai, H. Y. Hsiao, C. P. Lin, K. Kan, H. I. Lin, D. S. Wuu, “Thermal management design from chip to package for high-power GaN/sapphire LED applications,” Electrochem. Solid-State Lett. 12, pp. H222-225, 2009.

177.C. C. Wu, D. S. Wuu^*, P. R. Lin, T. N. Chen, R. H. Horng, “Effects of growth conditions on structural properties of ZnO nanostructures on sapphire substrate by metal-organic chemical vapor deposition,” Nanoscale Res. Lett. 4, pp. 377-384, 2009.

178.S. C. Hsu, D. S. Wuu^*, X. Zheng, R. H. Horng, “Electron-beam and sputter-deposited indium-tin-oxide omnidirectional reflectors for high-power wafer-bonded AlGaInP light-emitting diodes,” J. Electrochem. Soc. 156, pp. H281-H284, Feb. 2009.

179.X. Zheng, R. H. Horng^*, D. S. Wuu, M. T. Chu, W. Y. Liao, M. H. Wu, R. M. Lin, Y. C. Lu, “High-quality InGaN/GaN heterojunctions and their photovoltaic effects,” Appl. Phys. Lett. 93, 261108 (2008).

180.R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, D. S. Wuu^*, “Enhanced luminance efficiency of wafer-bonded InGaN/GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron.44, pp.1116-1123, 2008.

181.R. H. Horng^*, T. M. Wu, D. S. Wuu^*, “Improved light extraction in AlGaInP-based LEDs using a roughened window layer,” J. Electrochem. Soc. 155, pp. H710-H715, 2008.

182.Y. F. Shih^*, T. Y. Wang, R. J. Jeng, J. Y. Wu, D. S. Wuu, “Cross-linked and uncross-linked biodegradable nanocomposites. I. nonisothermal crystallization kinetics and gas permeability,” J. Appl. Polymer Sci. 110, pp. 1068-1079, 2008.

183.R. H. Horng, C. C. Chiang, H. Y. Hsiao, X. Zheng, D. S. Wuu^*, H. I. Lin, “Improved thermal management of GaN/sapphire light-emitting diodes embedded in reflective heat spreaders,” Appl. Phys. Lett. 93, 111907, 2008.

184.S. C. Hsu, D. S. Wuu^*, X. Zheng, J. Y. Su, M. F. Kuo, P. Han, R. H. Horng, “Power-enhanced ITO omni-directional reflective AlGaInP LEDs by two dimensional wavelike surface texturing,” Semicond. Sci. Technol. 23, 105013, 2008.

185.C. C. Yang, C. F. Lin^*, R. H. Jiang, H. C. Liu, C. M. Lin, C. Y. Chang, D. S. Wuu, H. C. Kuo, S. C. Wang, “Wet mesa etching process in InGaN-based light emitting diodes,” Electrochem. Solid-State Lett. 11, pp. H169-172, 2008.

186.R. H. Horng, P. Han, D. S. Wuu^*, “Phosphor free white light from InGaN blue and green light-emitting diode chips covered with semiconductor-conversion AlGaInP epilayer,” IEEE Photon. Technol. Lett. 20, pp.1139-1141, 2008.

187.R. H. Horng^*, X. Zheng, C. Y. Hsieh, D. S. Wuu, “Light extraction enhancement of InGaN light-emitting diode by roughening both undoped micropillar-structure GaN and p-GaN as well as employing an omnidirectional reflector,” Appl. Phys. Lett., 93, 021125, 2008.

188.S. Y. Huang, R. H. Horng^*. P. L. Liu, J. Y. Wu, D. S. Wuu, “Thermal stability improvement of vertical conducting green resonant-cavity light-emitting diodes on copper substrates,” IEEE Photon. Technol. Lett. 20, pp. 797-799, 2008.

189.S. C. Hsu, D. S. Wuu^*, X. Zheng, R. H. Horng, J. Y. Su, “High-performance AlGaInP/GaAs light-emitting diodes with a GaP:C/indium-tin oxide contact layer,” Jpn. J. Appl. Phys. 47, pp. 7023-7025, 2008.

190.C. C. Wu, D. S. Wuu^*, T. N. Chen, T. E. Yu, P. R. Lin, R. H. Horng, S. Sun, “Characteristics of ZnO nanowall network structure grown on GaN template using organometallic chemical vapor deposition,” J. Nanosci. Nanotechnol. 8, pp. 3851-3856, 2008.

191.C. C. Wu, D. S. Wuu^*, T. N. Chen, T. E. Yu, P. R. Lin, R. H. Horng, H. Y. Lai, “Growth and characterization of epitaxial ZnO nanowall networks using metal organic chemical vapor deposition,” Jpn. J. Appl. Plys. 47, pp. 746-750, 2008.

192.W. K. Wang, D. S. Wuu^*, S. H. Lin, S. Y. Huang, K. S. Wen and R. H. Horng, “Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates,” J. Phys. Chemistry Solids, 69/2-3, pp. 714-718, 2008.

193.R. H. Horng, Y. L. Chen, D. S. Wuu^*, “Red-enhanced white light-emitting diodes using external AlGaInP epilayers with various aperture ratios,” J. Lumin., 128/4, pp. 647-651, 2008.

194.C. C. Chiang, D. S. Wuu^*, Y. P. Chen, T. H. Jaw, R. H. Horng, “Fabrication of amorphous Si thin-film transistors on an engineered parylene template using a direct separation process,” Electrochem. Solid-State Lett., 11, pp. J4-J7, 2008.

195.S. Y. Lien, B. R. Wu, D. S. Wuu^*, J.C. Liu “Fabrication and characteristics of n-Si/c-Si/p-Si heterojunction solar cells using hot-wire CVD,” Thin Solid Films, 516, pp. 747-750, 2008.

196.S. Y. Lien, B. R. Wu, D. S. Wuu^*, M. C. Tseng, H. H. Yu “Hot-wire CVD deposited n-type mc-Si films for mc-Si/c-Si heterojunction solar cell applications,” Thin Solid Films, 516, pp. 765-769, 2008.

197.C. C. Chiang, D. S. Wuu^*, R. H. Horng, “An ultrathin (~100 mm thick) flexible light plate fabricated using self-alignment and lift-off techniques,” Appl. Phys. Lett., 91, 181108, 2007.

198.S. Y. Lien, H. Y. Mao, B. R. Wu, R. H. Horng, D. S. Wuu^*, “Incubation effects upon polycrystalline silicon on glass deposited by hot-wire CVD,” Chemical Vapor Deposition, 13, pp. 247-252, 2007.

199.S. Y. Huang, R. H. Horng^*, H. C. Kuo, D. S. Wuu, “Fabrication and characterization of InGaN-based green resonant-cavity LEDs using hydrogen ion-implantation techniques,” J. Electrochem. Soc. 154, pp. H962-H966, 2007.

200.S. H. Huang, R. H. Horng^*, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett., 19, pp. 1913-1915, 2007.

201.S. Y. Huang, R. H. Horng^*, D. S. Wuu, W. K. Wang, T. E. Yu, P. R. Lin, F. S. Juang, “Effects of transparent conductive layers on characteristics of InGaN-based green resonant-cavity light-emitting diodes,” Jpn. J. Appl. Phys. 46, pp. 3416-3419, 2007.   

202.S.C. Hsu, D.S. Wuu, C.Y. Lee, J.Y. Su, R.H. Horng^*, “High-efficiency 1-mm² AlGaInP LEDs sandwiched by ITO omni-directional reflector and current-spreading layer,” IEEE Photon. Technol. Lett., 19, pp. 492-494, 2007.

203.T.N. Chen, D.S. Wuu*, C.C. Wu, C.C. Chiang, Y.P. Chen, R.H. Horng, “Improvements of permeation barrier coatings using encapsulated parylene interlayers for flexible electronic applications,” Plasma Process. Polymer, 4, pp. 180-185, Apr. 2007.

204.R.H. Horng^*, W.K. Wang, K.S. Wen, S.C. Huang, S.H. Lin, S.Y. Huang, C.F. Lin, D.S. Wuu, “Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates,” J. Cryst. Growth, 298, pp. 219-222, Jan. 2007.

205.M. C. Lin, C. H. Tseng, L. S. Chang^*, D. S. Wuu, “Characterization of the silicon oxide thin films deposited on polyethylene terephthalate substrates by radio frequency reactive magnetron sputtering,” Thin Solid Films, 515, pp. 4596-4602, Apr. 2007.

206.D. S. Wuu^*, T. N. Chen, C. C. Wu, C.C. Chiang, Y. P. Chen, R. H. Horng, F. S. Juang, “Transparent barrier coatings for flexible organic light-emitting diode applications,” Chemical Vapor Deposition, 12, pp. 220-224, 2006.

207.D. S. Wuu^*, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, R. H. Horng, Y. S. Yu, M. H. Pan, “Fabrication of pyramidal patterned sapphire substrates for high-efficiency InGaN-based light emitting diodes,” J. Electrochem. Soc. 153, pp. G765-G770, 2006.

208.T. N. Chen, D. S. Wuu*, C. C. Wu, C. C. Chiang, Y. P. Chen, R. H. Horng, “High-performance transparent barrier films of SiO_x/SiN_x stacks on flexible polymer substrates,” J. Electrochem. Soc. 153, pp. F244-F248, 2006.

209.C. C. Chiang, D. S. Wuu^*, H. B. Lin, Y. P. Chen, T. N. Chen, Y. C. Lin, C. C. Wu, W. C. Chen, T. H. Jaw; R. H. Horng, “Deposition and permeation properties of SiNx/parylene multilayers on polymeric substrates,” Surf. Coat. Technol. 200, pp 5843-5848, 2006.

210.D. S. Wuu^*, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, R. H. Horng “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl Phys. Lett. 89, 161105, 2006.

211.S. H. Huang, R. H. Horng^*, K. S. Wen, Y. F. Lin, K. W. Yen, D. S. Wuu, “Improved light extraction of nitride-based flip-chip light-emitting diodes via sapphire shaping and texturing,” IEEE Photon. Technol. Lett., 18, pp. 2623-2625, 2006.

212.R. H. Horng*, S. H. Huang, C. C. Yang, D. S. Wuu, “Efficiency improvement of GaN-based LEDs with ITO texturing window layers using natural lithography,” IEEE J. Select. Topics Quantum Electron. 12, pp. 1196-1201, 2006.

213.S. C. Hsu, C. Y. Lee^*, J. M. Hwang, J. Y. Su, D. S. Wuu, R. H. Horng, “Enhanced light output in roughened GaN-based light-emitting diodes using electrodeless photoelectrochemical etching,” IEEE Photon. Technol. Lett., 18, pp. 2472-2474, 2006.

214.W. K. Wang, S. Y. Huang, S. H. Huang, K. S. Wen, D. S. Wuu^*, R. H. Horng “Fabrication and efficiency improvement of micropillar InGaN/Cu light-emitting diodes with vertical electrodes,” Appl. Phys. Lett. 88, pp. 181113-1-3, 2006.

215.S. Y. Lien, D. S. Wuu^*, W. C. Yeh, J. C. Liu, “Tri-layer antireflection coatings (SiO₂/SiO₂-TiO₂/TiO₂) for silicon solar cells using a sol-gel technique,” Solar Energy Materials and Solar Cells, 90, pp. 2710-2719, 2006.

216.T. N. Chen, D. S. Wuu^*, C. C. Wu, C. C. Chiang, H. B. Lin, Y. P. Chen, and R. H. Horng, “Effects of plasma pretreatment on silicon nitride barrier films on polycarbonate substrates,” Thin Solid Films, 514, pp. 188-192, 2006.

217.D. S. Wuu^*, S. H. Lin, W. K. Wang, S. Y. Huang, S. H. Huang, P. Han, R. H. Horng “Characteristics of flip-chip InGaN-based light-emitting diode on patterned sapphire substrates,” Jpn. J. Appl. Phys. 45, pp. 3430-3432, 2006.

218.S. Y. Huang, R. H. Horng^*, W. K Wang, D. S. Wuu, “GaN-based green resonant cavity light-emitting diodes,” Jpn. J. Appl. Phys. 45, pp. 3433-3435, 2006.

219.S. H. Huang, R. H. Horng^*, D. S. Wuu, “Improvements of n-side-up GaN light-emitting diodes performance by indium-tin-oxide/Al mirror,” Jpn. J. Appl. Phys. 45, pp. 3449-3452, April 2006.

220.C. C. Wu, R. H. Horng^*, D. S. Wuu, T. N. Chen, S. S. Ho, C. J. Ting, H. Y. Tsai “Thinning technology for lithium niobate wafer by surface activated bonding and chemical mechanical polishing,” Jpn. J. Appl. Phys. 45, pp. 3822-3827, 2006.

221.S.Y. Lien, D. S. Wuu^*, H. Y. Mao, B. R. Wu, Y. C. Lin, I. C. Hseih, R. H. Horng “Fabrications of Si thin-film solar cells by hot-wire chemical vapor deposition and laser doping techniques,” Jpn. J. Appl. Phys. 45, pp. 3516-3518, 2006.

222.R. H. Horng^*, W. K. Wang, S. Y. Huang, D. S. Wuu, “Effect of resonant cavity in wafer-bonded green InGaN LED with dielectric and silver mirrors,” IEEE Photon. Technol. Lett., 18, pp. 457-459, Feb. 2006.

223.D. S. Wuu^*, S. Y. Lien, H.Y. Mao, J. H. Wang, B. R. Wu, P. C. Yao, I. C. Hsieh, H. H. Peng, R. H. Horng, Y. C. Chuang, “Improvement of indium-tin oxide films on polyethylene terephthalate substrates using hot-wire surface treatment,” Thin Solid Films, 501/1-2, pp 346-349, 2006.

224.D. S. Wuu^*, S. Y. Lien, H.Y. Mao, B. R. Wu, I. C. Hsieh, P. C. Yao, J. H. Wang, W. C. Chen, “Growth and characterization of polycrystalline Si films prepared by hot-wire chemical vapor deposition,” Thin Solid Films, 498/1-2, pp 9-13, 2006.

225.S. Y. Lien, B. R. Wu, I. C. Hsieh, J. H Wang, H. Y. Mao, D. S. Wuu^*, “Simultaneous recrystallization, phosphorous diffusion and antireflection coating of silicon films using laser treatment,” Thin Solid Films, 496/2, pp 643-648, 2006.

226.W. K. Wang, D. S. Wuu^*, S. H. Lin, P. Han, R. H. Horng, T. C. Hsu, D. T. C. Huo, M. J. Jou, Y. H. Yu, A. Lin, ‘Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates’, IEEE J. Quantum Electron. 41, pp. 1403-1409, Nov. 2005.

227.W. Y. Lin, D. S. Wuu^*, K. F. Pan, S. H. Huang, C. E. Lee, W. K. Wang, S. C. Hsu, Y. Y. Su, S. Y. Huang, R. H. Horng, ‘High-power GaN/mirror/Cu light-emitting diodes for vertical current injection using laser lift-off and electroplating techniques’, IEEE Photon. Technol. Lett. 17, pp. 1809-1811, 2005.

228.D. S. Wuu^*, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin and J. S. Fang, ‘Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates’, IEEE Photon. Technol. Lett. 17, pp. 288-290, 2005.

229.I. C. Hsieh, B. R. Wu, S. Y. Lien, D. S. Wuu^*, ‘Thickness effects on microstructural evolution of low-pressure-chemical-vapor-deposited amorphous silicon films during excimer-laser-induced crystallization’, Thin Solid Films, 493, pp. 185-191, 2005.

230.W. K.Wang, D. S. Wuu^*, W. C. Shih, J. S. Fang, C. E. Lee, W. Y. Lin, P. Han, R. H. Horng, T. C. Hsu, T. C. Huo, M. J. Jou, A. Lin and Y. H.Yu, ‘Near-ultraviolet InGaN/GaN light-emitting diodes grown on patterned sapphire substrates’, Jpn. J. Appl. Phys. 44, pp. 2512-2515, 2005.

231.C. C. Yang, R. H. Horng^*, C. E. Lee, W. Y. Lin, K. F. Pan, Y. Y. Su and D. S. Wuu, ‘Improvement in extraction efficiency of GaN-based light-emitting diodes with textured surface layer by natural lithography’, Jpn. J. Appl. Phys. 44, pp. 2525-2527, 2005.

232.R. H. Horng^*, C. C. Yang, J. W. Wu, S. H. Huang, C. E. Lee, D. S. Wuu, ‘GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography’, Appl. Phys. Lett. 86, pp. 221101-03, 2005.

233.S. H. Huang, R. H. Horng^*, S. C. Hsu and D. S. Wuu, ‘Surface Texturing for Wafer-bonded vertical-type GaN/mirror/Si light-emitting diodes’, Jpn. J. Appl. Phys. 44, pp. 3028-3031, 2005.

234.D. S. Wuu^*, W. C. Lo, C. C. Chiang, H. B. Lin, L. S. Chang, R. H. Horng, C. L. Huang, and Y. J. Gao, ‘Plasma-deposited silicon oxide barrier films on polyethersulfone substrates: temperature and thickness effects’, Surf. Coat. Technol. 197, pp. 253-259, 2005.

235.D. S. Wuu^*, W. C. Lo, C. C. Chiang, H. B. Lin, L. S. Chang, R. H. Horng, C. L. Huang, and Y. J. Gao, ‘Water and oxygen permeation of silicon nitride films prepared by plasma enhanced chemical vapor deposition’, Surf. Coat. Technol. 198, pp. 114-117, 2005.

236.D. S. Wuu^*, S. Y. Lien, J. H. Wang, H. Y. Mao, I. C. Hsieh, B. R. Wu, and P. C. Yao, ‘Laser doping and recrystallization for amorphous silicon films by plasma-enhanced chemical vapor deposition’, Mater. Sci. Forum, 475-479, pp. 3791-3794, 2005.

237.D. S. Wuu^*, W. C. Lo, C. C. Chiang, H. B. Lin, L. S. Chang, R. H. Horng, C. L. Huang, and Y. J. Gao, ‘Transparent barrier coatings on flexible polyethersulfone substrates for moisture-resistant applications’, Mater. Sci. Forum, 475-479, pp. 4017-4020, 2005.

238.I. C. Hsieh, S. Y. Lien, and D. S. Wuu^*, ‘Transformation of microcrystalline silicon film by excimer-laser-induced crystallization’, Thin Solid Films, 473, pp. 169-175, 2005.

239.D. S. Wuu^*, S. C. Hsu, S. H. Huang, C. C. Wu, C. E. Lee, and R. H. Horng, ‘GaN/Mirror/Si light-emitting diodes with vertical current injection by laser lift-off and wafer bonding techniques’, Jpn. J. Appl. Phys. 43, pp. 5239-5242, 2004.

240.R. H. Horng^*, C. E. Lee, S. C. Hsu, S. H. Huang, C. C. Wu, C. Y. Kung, and D. S. Wuu, ‘High-power GaN light-emitting diodes with patterned copper substrates by electroplating’, Phys. Stat. Sol. (a), 201, pp. 2786-2790, 2004.

241.D. S. Wuu^*, W. C. Lo, L. S. Chang, and R. H. Horng, ‘Properties of SiO₂-like barrier layers on polyethersulfone substrates by low-temperature plasma-enhanced chemical vapor deposition’, Thin Solid Films, 468, pp. 105-108, 2004.

242.D. S. Wuu^*, S. C. Hsu, S. H. Huang, and R. H. Horng, ‘Vertical-conducting p-side-up GaN/mirror/Si light-emitting diodes by laser lift-off and wafer-transfer techniques’, Phys. Stat. Sol. (a), 201, pp. 2699-2703, 2004.

243.D. S. Wuu^*, S. C. Hsu, and R. H. Horng, ‘Improvements of transparent electrode materials for GaN metal-semiconductor-metal photodetectors’, J. Mater. Sci.: Materials in Electronics, 15, pp. 793-796, 2004.

244.R. H. Horng^*, C. E. Lee, C. Y. Kung, S. H. Huang, and D. S. Wuu, ‘High-power AlGaInP light-emitting diodes with patterned copper substrates by electroplating’, Jpn. J. Appl. Phys. 43, pp. L576-578, 2004.

245.R. H. Horng^*, S. H. Huang, D. S. Wuu, and Y. Z. Jiang, ‘Characterization of large-area AlGaInP/mirror/Si light-emitting diodes fabricated by wafer bonding’, Jpn. J. Appl. Phys. 43, pp.2510-2514, 2004.

246.D. S. Wuu^*, R. H. Horng, C. C. Lin, and Y. H. Liu, ‘Characterization of (Ba,Sr)TiO₃ thin-film capacitors with Ir bottom electrodes and its improvement by plasma treatment’, Microelectronic Engineering, 66, pp. 600-607, 2003.

247.R. H. Horng^*, S. H. Huang, D. S. Wuu, and C. Y. Chiu, ‘AlGaInP/mirror/Si light-emitting diodes with vertical electrodes by wafer bonding’, Appl. Phys. Lett., 82, pp. 4011-4013, 2003.

248.D. S. Wuu^*, R. H. Horng, S. H. Huang, and C. R. Chung, ‘High-Density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes’, J. Vac. & Tech. A, 20, pp. 766-771, 2002.

249.D. S. Wuu^*, C. R. Chung, Y. H. Liu, R. H. Horng, and S. H. Huang, ‘Deep etch of GaP using high density plasma for light-emitting diode applications’, J. Vac. & Tech. B, pp. 902-908, 2002.

250.R. H. Horng^*, W. C. Peng, D. S. Wuu, W. J. Ho, and Y. S. Huang, ‘Surface treatment and electrical properties of directly wafer-bonded InP epilayer on GaAs substrate’, Solid State Electron. 46, pp. 1103-1108, 2002.

251.R. H. Horng^* and D. S. Wuu, ‘Wafer-bonded 850-nm vertical-cavity surface-emitting lasers on Si substrate with metal mirror’, Jpn. J. Appl. Phys. 41, pp. 5849-5852, 2002.

252.D. S. Wuu^*, C. C. Lin, R. H. Horng, F. C. Liao, and Y. H. Liu, ‘Etching characteristics and plasma-induced damage of high-k Ba_0.5Sr_0.5TiO₃ thin-film capacitors,’ J. Vac. & Tech. B, 19, pp. 2231-2236, 2001.

253.R. H. Horng^*, D. S. Wuu, Y. C. Lien, and W. H. Lan, ‘Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN,’ Appl. Phys. Lett., 79, pp. 2925-2927, 2001.

254.R. H. Horng^*, D. S. Wuu, C. H. Seieh, W. C. Peng, M. F. Huang, S. J. Tsai, and J. S. Liu, “Wafer bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers,’ J. Electron. Mater., 30, pp. 907-910, 2001.

255.D. S. Wuu, F. C. Liao, R. H. Horng, C. C. Lin, ‘Nitridation of Ba_0.7Sr_0.3TiO₃ Films by inductively coupled plasma,’ J. Non-crystalline Solid, 280, pp. 211-216, 2001.

256.D. S. Wuu^*, R. H. Horng, C. C. Chan and Y. Y. Wu, ‘Various properties of sputter-deposited Ta-Ru thin films,’ Appl. Surf. Sci., 169, pp. 391-394, 2001.

257.D. S. Wuu^*, N. H. Kuo, F. C. Liao, R. H. Horng, and M. K. Lee, ‘Etching of platinum thin films in an inductively coupled plasma,’ Appl. Surf. Sci., 170, pp. 638-643, 2001.

258.R. H. Horng^*, Y. C. Lien, W. C. Peng, D. S. Wuu, C. Y. Tseng, C. H. Seieh, M. F. Huang, S. J. Tsai, and J. S. Liu, “High-brightness wafer-bonded ITO/LED/ Mirror/Si,’ Jpn. J. Appl. Phys., 40, pp. 76-80, 2001.

259.R. H. Horng^*, D. S. Wuu, C. Y. Kung, J. C. Lin, C. C. Leu, T. Y. Haung, and S. M. Sze, ‘Ion-implanted treatment of (Ba,Sr)TiO₃ films for DRAM applications,’ J. Non-Crystalline Solid, 280, pp. 48-53, 2001.

260.D. S. Wuu^*, R. H. Horng, W. H. Tseng, W. T. Lin and C. Y. King ‘Effect of temperature ramping rate on GaN buffer layers and subsequent GaN overlayers grown by metalorganic chemical vapor deposition,’ J. Cryst. Growth, 220, pp. 235-242, 2000.

261.D. S. Wuu^*, W. T. Lin, C. C. Pan and R. H. Horng, ‘Growth characteristics of GaN on (001) GaP substrates by MOCVD,’ J. Cryst. Growth, 221, pp. 287-293, 2000.

262.D. S. Wuu^*, C. C. Chan, and R. H. Horng, ‘Characterization of sputtered Ta-Ru thin films for ink-jet heater applications,’ Thin Solid Films, 373, pp.84-88, 2000.

263.R. H. Horng^*, D. S. Wuu, C. Y. Kung, J. C. Lin, C. C. Leu, T. Y. Haung, and S. M. Sze, ‘Ion-implantation treatment of (Ba, Sr)TiO₃ films,’ Jpn. J. Appl. Phys, 39, pp. 6614-6618, 2000.

264.C. K. Chung^*, T. H. Jaw, D. S. Wuu, and J. Huang, ‘Electrical properties of Ir-silicide formation on p-Si(100) in ultra high vacuum,’ Thin Solid Films, 373, pp. 68-72, 2000.

265.R. H. Horng^*, D. S. Wuu, L. H. Wu, and M. K. Lee, ‘Formation process and material properties of reactive sputtered IrO₂ thin films,’ Thin Solid Films, 373, pp. 231-234, 2000.

266.D. S. Wuu^*, F. C. Liao, N. H. Kuo, R. H. Horng, and M. K. Lee, ‘Etching characteristics and mechanism of Ba_0.7Sr_0.3TiO₃ thin films in an inductively coupled plasma,’ Jpn. J. Appl. Phys. 39, pp. 2068-2072, 2000.

267.D. S. Wuu^*, R. H. Horng, F. C. Liao, C. C. Leu, T. Y. Huang, S. M. Sze, H. Y. Chen, and C. Y. Chang, ‘Characterization of NH₃ plasma-treated Ba_0.7Sr_0.3TiO₃ thin films,’ Microelectronics Reliability, 40, pp. 663-666, 2000.

268.R. H. Horng^*, D. S. Wuu, S. C. Wei, C. Y. Tseng, M. F. Huang, K. H. Chang, P. H. Liu, and K. C. Lin, ‘Wafer-bonded AlGaInP/Au/AuBe/SiO₂/Si Light Emitting Diodes,’ Jpn. J. Appl. Phys. 39, pp. 2357-2359, 2000.

269.R. H. Horng^*, D. S. Wuu, C. C. Leu, S. H. Chan, T. Y. Huang, S. M. Sze, ‘Effects of fluorine-implanted Ba_0.7Sr_0.3TiO₃ films,’ Microelectronics Reliability, 40, pp. 667-670, 2000.

270.C. C. Leu^*, S. H. Chan, H. Y. Chen, R. H. Horng, D. S. Wuu, L. H. Wu, T. Y. Huang, C. Y. Chang, and S. M. Sze, ‘Effects of O₂ plasma treatment on the electric and dielectric characteristics of Ba_0.7Sr_0.3TiO₃ thin films,’ Microelectronics Reliability, 40, pp. 679-682, 2000.

271.D. S. Wuu^*, C. C. Chan, R. H. Horng, ‘Material characterization and thermal stability of sputtered Ta-Ru thin films,’ J. Vacuum Sci. & Technol. A, 17, pp. 3327-3332, 1999.

272.R. H. Horng^*, D. S. Wuu, S. C. Wei, C. Y. Tseng, M. F. Huang, K. H. Chang, P. H. Liu, and K. C. Lin, ‘AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding,’ Appl. Phys. Lett., 75, pp. 3054-3056, 1999.

273.R. H. Horng^*, D. S. Wuu, S. C. Wei, M. F. Huang, K. H. Chang, P. H. Liu, and K. C. Lin, ‘AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology,’ Appl. Phys. Lett., 75, pp.154-156, 1999.

274.D. S. Wuu^*, C. C. Chan, R. H. Horng, Y. S. Lee, ‘Plasma-deposited amorphorus silicon carbide films for micromachined fluidic channels,’ Appl. Surf. Sci., 145, pp. 708-712, 1999.

275.D. S. Wuu^*, C. C. Chan, R. H. Horng, W. C. Lin, ‘Structural and electrical properties of Ta-Al thin films by r.f. magnetron sputtering,’ Appl. Surf. Sci., 145, pp. 315-318, 1999.

276.R. H. Horng^*, D. S. Wuu, L. H. Wu, S. H. Chan, C. C. Leu, ‘Co-sputtered Ru-Ti alloy electrodes for DRAM application,’ Thin Solid Films, 344, pp. 591-594, 1999.

277.R. H. Horng^*, D. S. Wuu, S. C. Wei, S. H. Chan and C. Y. Kung, ‘A research on the persistent photoconductivity behavior for GaN thin fims deposited by r.f. magnetron sputtering,’ Thin Solid Films, 344, pp. 635-638, 1999.

278.R. H. Horng^*, D. S. Wuu, L. H. Wu, S. C. Wei, S. H. Chan, C. C. Leu, T. Y. Huang, and S. M. Sze, ’Thermal stability of co-sputtered Ru-Ti alloy electrodes for DRAM applications,’ Jpn. J. Appl. Phys., 37, pp. L1247-1250, 1998.

279.C. W. Wang^*, R. H. Horng, D. S. Wuu and B. C. Huang, ‘Luminescence improvement of SrS:Ce thin films by rapid thermal annealing-Evidence of energy-transfer model for SrS:Ce electroluminescent devices,’ J. Appl. Phys., 83, pp. 7958-7864, 1998.

280.R. H. Horng^*, D. S. Wuu, S. H. Chan, M. C. Ching, T. Y. Huang, S. M. Sze, ‘Rapid -thermal-processed BaTiO₃ thin films deposited by liquid-source misted chemical deposition,’ Jpn. J. Appl. Phys., 37, pp. 885-888, 1998.

281.D. S. Wuu^*, R.H. Horng, and C.Y. Cheng, ‘Planarization and fabrication of sacrificial membranes across deep grooves in silicon by glass soot deposition,’ J. Micromech . Microeng., 7, pp. 276-279, 1997.

282.R. H. Horng and D. S. Wuu, ‘The effects of rapid thermal process on the properties of sputtered SrS:Ce thin films,’ J. Appl. Phys., 82, pp. 1363-1366, 1997.

283.R. H. Horng^*, D. S. Wuu, and C. Y. Kung, ‘Characterization of thin film electroluminescent devices with multiple Ta₂O₅ interlayers incorporated into SrS:Pr, Ce phosphor,’ Jpn. J. Appl. Phys., 36, pp. 7245-7249, 1997.

284.R. H. Horng^* and D. S. Wuu, ‘Structural and electroluminescent characteristics of sputtered SrS:Ce thin films by rapid thermal process,’ Thin Solid Films., 307, pp. 228-232, 1997.

285.R. H. Horng^*, D. S. Wuu, and J. W. Yu, ‘Improvements in electroluminescent properties by incorporting multi-barrier Y₂O₃ layers in ZnS:Mn phosphor layer,’ Mater. Chem. & Phys., 51, pp. 11-14, 1997.

286.D.S. Wuu^*, M.L. Lee, and T.Y. Lin, ‘Characterization of hafnium diboride thin film resistors by RF magnetron sputtering,’ Mater. Chem. & Phys., 45, pp. 163-166, 1996.

287.D.S. Wuu^*, M.L. Lee, and T.Y. Lin, ‘Properties of multilayered thin films for thermal ink-jet printing devices,’ Appl. Surf. Sci., 92, pp. 626-629, 1996.

288.R.H. Horng^*, D.S. Wuu, and J.W. Yu, ‘Effects of rapid thermal process on structural and electrical characteristics of Y₂O₃ thin films by RF-magnetron sputtering,’ Thin Solid Films, 289, pp. 234-237, 1996.

289.R.H. Horng^*, F. Chen, D.S.Wuu, and T.Y. Lin, ‘Refractive index behavior of PECVD boron-doped silica films,” Appl. Surf. Sci., 92, pp.387-390, 1996.

290.M. K. Lee^*, D. S. Wuu, and R. H. Horng, ’p⁺/n/n⁺ InP solar cells directly on Si substrates,’ Appl. Phys. Lett., 62, pp. 1140-1142, 1993.

291.M. K. Lee^*, R. H. Horng, D. S. Wuu, and P. C. Chen, ‘Improvements in the Heteroepitaxy of GaAs on Si by Incorporation a ZnSe Buffer Layer,’ Appl. Phys. Lett., 59, pp. 207-209, 1991.

292.R. H. Horng, D. S. Wuu, and M. K. Lee^*, ‘Characteristics of Ga_0.5In_0.5P/GaAs heterostructures grown on Si substrates by organometallic epitaxy,’ J. Appl. Phys., 67, pp. 753-756, 1991

293.D. S, Wuu, R. H. Horng, and M. K. Lee^*, ‘Indium phosphide on silicon heteroepitaxy: lattice deformation and strain relation,’ J. Appl. Phys., 68, pp.3380-3342, 1990.

294.D. S. Wuu, R. H. Horng, and M. K. Lee^*, 1989, ‘Strain variations in heteroepitaxial InP-on-Si grown by low pressure metalorganic chemical vapor deposition,’ Appl. Phys. Lett., 54, pp. 2244-2246, 1989.

295.D. S. Wuu, H. H. Tung, R. H. Horng, and M. K. Lee^*, ‘Material properties of InP-on-Si grown by low-pressure organometallic vapor phase epitaxy,’ Appl. Phys. Lett., 65, pp. 1213-1216, 1989.

296.R. H. Horng, D. S. Wuu, and M. K. Lee^*, ’Heteroepitaxial growth of Ga_0.5In_0.5P/GaAs on Si by low pressure organometallic chemical vapor deposition,’ Appl. Phys. Lett., 53, pp. 2614-2616, 1988.

297.D. S. Wuu, R. H. Horng, K. C. Huang, and M. K. Lee^*, ‘Improvements in the organometallic heteroepitaxy of indium phosphide directly on silicon,’ Appl. Phys. Lett., 54, pp. 236-238, 1989.

298.M. K. Lee^*, D. S. Wuu, H. H. Tung, J. H. Chang, and Y. F. Lin, ‘Growth and characterization of InP on ZnSe-coated Si substrates by low-pressure metalorganic vapor phase epitaxy,’ Appl. Phys. Lett., 53, pp. 103-105, 1988.

299.M. K. Lee^*, K. C. Huang, D. S. Wuu, and H. H. Tung, ‘Growth and characterization of InP/GaAs epilayers on Si substrates by low-pressure metalorganic vapor phase epitaxy,’J. Cryst. Growth, 93, pp. 539-542, 1988.

300.M. K. Lee^*, D. S. Wuu, H. H. Tung, and K. C. Huang, ‘Characterization of InP/GaAs epilayers on Si substrates by low-pressure metalorganic vapor phase epitaxy,’Appl. Phys. Lett., 52, pp. 880-882, 1988.

301.M. K. Lee^*, D. S. Wuu, and H. H. Tung, ‘Heteropitaxial growth of InP on GaAs by low pressure metalorganic chemical vapor deposition,’ J. Appl. Phys., 62, pp. 3209-3212, 1987.

302.M. K. Lee^*, D. S. Wuu, and H. H. Tung, Heteropitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor deposition,’ Appl. Phys. Lett., 50, pp. 1725-1726, 1987.

303.M. K. Lee^*, D. S. Wuu, and H. H. Tung, ‘Low pressure metalorganic vapor phase epitaxy of InP using an adduct source,’ Appl. Phys. Lett., 50, pp. 1805-1807, 1987.

1.  Dong-Sing Wuu*, “III-N ultraviolet light emitters for energy-saving applications,” (book chapter 4, 42 pages) in Materials for Energy, Editor: Sam Zhang (ISBN: 9780367350215), CRC Press, Taylor & Francis Group, UK, Oct. 5, 2020.

2.  Dong-Sing Wuu* (editor). Functional Oxide Based Thin-Film Materials (I) (ISBN: 978-3-03928-838-0). St. Alban-Anlage 66, 4052 Basel, Switzerland: MDPI. Apr, 2020.

3.  Ray-Hua Horng, Sin-Liang Ou, Dong-Sing Wuu, “Improvement in heat dissipation capability of GaN-based light-emitting diodes,” (book chapter) in Gallium Nitride: Structure, Thermal Properties and Applications (ISBN: 978-1-63321-387-6). Nova Science Publishers, Incorporated, Jan. 2014.

4.  Dong-Sing Wuu*, Ray-Hua Horng, Parvaneh Ravadgar, and Sin-Liang Ou. “Effects of annealing on structural and optical properties of single crystalline Ga₂O₃ epilayers,” (book chapter 2) in Physics and Mechanics of New Materials and their Applications (ISBN: 978-1-62618-535-7). Nova Science Publisher. Jan. 2013.

5.  Dong-Sing Wuu*, Chia-Cheng Wu, and Ray-Hua Horng, “Metalorganic vapor deposition and characterization of ZnO-based nanostructures and thin films,” (book chapter) in Handbook of Zinc Oxide and Related Materials: Volume II, Devices and Nano-Engineering, (ISBN: 9781439855744). FL. USA: Taylor & Francis. Sep. 2012.

6.  Dong-Sing Wuu^*, Tsai-Ning Chen, Chapter 25 “Nanoceramic barrier coatings for polymer substrates and their applications,” (book chapter 17, 28 pages) in Handbook of Nanoceramics and Their Based Nanodevices, Editor: Tseung-Yuen Tseng and Hari Singh Nalwa, Vol. 4, American Scientific Publishers (ISBN 1-58883-114-0) 2009.

7.  D. S. Wuu^*, W. K. Wang, R. H. Horng, “III-Nitride light-emitting devices on patterned sapphire substrates,” (book chapter 12, pp. 337-362) in III-Nitride Devices and Nano- Engineering, Editor: Zhe Chuan Feng, Publisher: Imperial College Press (ISBN 978-1-84816-223-5) 2007.

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